CMOS IMAGE SENSOR HAVING PHOTO DIODE CONNECTED WITH CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A CMOS image sensor having a photo diode connected with a capacitor and a method for manufacturing the same are provided to reduce an area of a photo diode and obtain a capacitance by connecting a photo diode with a capacitor. CONSTITUTION: An isolation layer(402) is formed locally on a semiconductor layer(401). A plate node(404b) of a capacitor is formed by inserting an insulating layer into the semiconductor layer(401). A photo diode(406) is formed on a lower portion of a surface of the semiconductor layer(401). A capacitor dielectric(408) covers the plate node(404b). A storage node(409) of the capacitor contacted with the photo diode(406) is formed on the capacitor dielectric(408). A contact medium conductive layer is formed to connect the storage node(409) with the photo diode(406).