METHOD FOR MANUFACTURING BARRIER METAL LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a barrier metal layer of a semiconductor device is provided to form a uniform TiSi2 layer having an excellent resistance characteristic, by performing a Ti deposition process while a substrate is heated, so that Ti atom reacts with Si atom and is transformed to TiSi2 as soon as the Ti atom reaches the substrate on the bottom surface of a contact hole. CONSTITUTION: A silicon substrate(10) having an interlayer dielectric(11) and a contact hole is prepared. The substrate is heated to a temperature at which Ti atom reacts with Si atom. A Ti deposition process is performed while the substrate is heated, to form a Ti layer(13) on the interlayer dielectric while a TiSi2 layer(12) is formed on the silicon substrate of the bottom surface of the contact hole. A TiN layer(14) is formed on the Ti layer and the TiSi2 layer.