| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is to increase a polishing speed and to improve an insulating characteristic between devices. CONSTITUTION: A conductive wiring(23) is formed on a semiconductor substrate(21), and a low-K dielectric polymer insulating film(25) is formed on the entire surface of the substrate. The low-K dielectric polymer insulating film is selected any one from a group consisting of HSQ(hydrogen silsesquioxane)-SOG(spin on glass) film, MSQ(methyl silsesquioxane)-SOG film, 3022 BCB(benzocyclobutene) film, a SiLK(trademark) film and a FLARE(fluorinated poly) film, and is formed to have a thickness of 3000 to 20000 angstrom at a temperature of 300 to 700 deg.C. The low-K dielectric polymer insulating film is annealed at an N2 atmosphere at a temperature of 200 to 500 deg.C during 5 to 50 minutes. The annealed polymer insulating film is carried out through an O2 plasma procedure during 30 minutes to 3 hours.
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