| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is to sufficiently secure a design margin and an allowing space by manufacturing delay devices at once. CONSTITUTION: The first photoresist pattern is formed on a field oxide, on which a delay device is formed, using a buried contact mask. An oxide film is removed from the active region(21) to expose a substrate, and the substrate is carried out through an ion implantation to form a buried contact. The first photoresist pattern is removed, the first polysilicon layer is formed on the entire surface of the substrate. A dielectric film is formed on the entire surface of the substrate, and the second photoresist pattern is formed on the dielectric film, on which a delay circuit is to be formed. After a portion of the dielectric film is removed using the second photoresist pattern, the second polysilicon layer, a top polysilicon layer, a tungsten silicide layer, and an anti-reflective film are formed on the entire surface of the substrate.
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