| 摘要 |
PURPOSE: A protecting circuit for an ElectroStatic Discharge(ESD) of a flash memory device is provided to improve an ESD zapping efficiency by easily generating a bi-polar action in the ESD circuit. CONSTITUTION: The protecting circuit for the ESD includes a field area and an active area, a pad active area(31), a Vcc active area(32), an active area(33), a Vss active area(34) and an active area(35) for connecting an inner circuit, an ESD zapping metal pad(42), and first and second transistors(36,37). The field and active areas are defined in the semiconductor substrate. The pad active area, Vcc active area, active area, Vss active area and active area for connecting an inner circuit are formed by performing an ion implanting process to the active area. The ESD zapping metal pad is connected to the inner circuit through the active area and the active area for connecting the inner circuit. The first transistor, whose gate is connected to the power terminal, is formed on the Vcc active area. The second transistor is formed on the Vss active area. The gate of the second transistor is connected to a ground terminal.
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