| 摘要 |
PURPOSE: A method for forming a silicon active layer is to form a silicon layer having a large crystalline grain size at a temperature, which is lower than a melting point of the glass substrate, without a long-term thermal annealing. CONSTITUTION: The first crystalline silicon pattern(21A) functioning as a seed for nucleation is formed on a glass substrate(20). An amorphous silicon film(22) is coated on the glass substrate to cover the first crystalline silicon pattern. The resultant glass substrate is annealed to form the second crystalline silicon(22A) centered at the first crystalline silicon pattern. Amorphous crystallized portion of the amorphous silicon film and the second crystalline silicon are selectively etched to form a silicon active layer of the second crystalline silicon. The first crystalline silicon pattern is formed by annealing an amorphous silicon pattern formed on seed forming portions of the glass substrate.
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