| 摘要 |
PURPOSE: A ferroelectric memory device having a spin on glass layer on a metal line and a method for manufacturing the same are provided to prevent a short-circuit between metals by improving the flatness of an insulating layer between metal lines. CONSTITUTION: A transistor is formed on a semiconductor substrate(10). An interlayer dielectric covers the transistor. A ferroelectric capacitor including a lower electrode(11), a ferroelectric layer(12), and an upper electrode(13) is formed on the interlayer dielectric. An insulating layer(15) covers the ferroelectric capacitor. A SiON layer(16) is formed on the insulating layer(15). The ferroelectric capacitor is connected with the transistor by a metal line. A USG(Undoped Silicate Glass) layer(20) covers the metal line and the SiON layer(16). A SOG layer(21) is formed on the USG layer.
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