CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to prevent deterioration of a noise characteristic by transferring a dark current to an N- diffusion region of a pinned diode. CONSTITUTION: An isolation layer(2) is formed locally on a semiconductor layer of the first conductive type. A gate electrode(4) of a transfer transistor is formed on a predetermined portion of the semiconductor layer. The first diffusion region(6) of the second conductive type is formed by performing an ion implanting process using the first mask. An insulating layer spacer(7) is formed at a sidewall of the gate electrode(4). The second diffusion region(9) of the first conductive type is formed on a lower portion of the semiconductor layer. The third diffusion region(10) of the first conductive type is formed by performing the ion implanting process using the third mask.