METHOD FOR FORMING LOWER ELECTRODE OF HIGH DIELECTRIC CAPACITOR

摘要

PURPOSE: A method for forming the lower electrode of a high dielectric capacitor is provided to decrease the loss of an interlayer insulating film and to increase the adhesive strength with the lower electrode by applying a thin TiN film and preventing the interlayer insulating film of a lower layer exposing in the case that a silicon oxide film hard mask is used. CONSTITUTION: An interlayer insulating film(11) and a diffusion barrier provided on thereon at least are formed on a substrate(10), and a metal film(14) for a lower electrode is formed on the whole structure. The first TiN film(15) is formed on the metal film(14) and a hard mask pattern of a silicon oxide film(16) is formed thereon. By using the hard mask pattern as an etching mask, the metal film(14) is patterned to leave the diffusion barrier. The silicon oxide film(16) is removed, and the remaining diffusion barrier(13a) and the first TiN film(15) are removed.