| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is to remove a photoresist before CMP(chemical mechanical polishing) process and to implement a polishing after an anti-reflection coating that serves as a scratch source is removed, so as to prevent breakage of a lower electrode and to regulate height thereof constantly, thereby stabilizing process margin and improving electrical characteristics. CONSTITUTION: A core oxide layer and an anti-reflection coating are successively formed on a semiconductor substrate(20). By an etching process using a capacitor mask, a part of the anti-reflection coating and the core oxide layer is removed to form a core oxide layer pattern. After removing the anti-reflection coating remaining on the core oxide layer pattern, a polysilicon layer is deposited on the entire structure. A photoresist is formed on the resultant structure and, in a peripheral region, is removed by an etching process together with the polysilicon layer. The photoresist in a cell region is removed and then an oxide layer is deposited on the resultant structure. After implementing a CMP process, the oxide layer and the core oxide layer pattern are removed to form a lower electrode(23a) of the capacitor.
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