VOLTAGE RESERVOIR CAPACITOR WITH TRENCH STRUCTURE

摘要

PURPOSE: A voltage reservoir capacitor with a trench structure is provided to form necessary capacitance within a limited area and improve an integration rate of a device by forming a voltage reservoir and a transistor of a structure of a trench. CONSTITUTION: A trench is formed within a semiconductor substrate(20). An insulating layer(21) is formed on the semiconductor substrate(20) of the trench and the surrounding of the trench. An electrode(22) is formed on the insulating layer(21). The trench is filled with the electrode(22). The electrode(22) covers the semiconductor substrate(20) of the surrounding of the trench. A word line turn-on voltage is applied to the electrode(22).