发明名称 METHOD FOR MANUFACTURING IMAGE SENSOR
摘要 PURPOSE: A method for manufacturing an image sensor is provided to improve a refractive index and a sensitivity of an image sensor by using a micro lens. CONSTITUTION: A flattening layer(26) is formed on a substrate(21) formed with a photo diode(23). An oxide layer is formed on the flattening layer(26). The oxide layer with the same width of the photo diode(23) is formed by etching the oxide layer. A nitride layer is formed on the whole structure. A nitride layer spacer(29a) is formed at a sidewall of the etched oxide layer by etching the nitride layer. A micro lens is formed by forming the nitride layer spacer(29a). The micro lens is formed with the oxide layer and the nitride layer.
申请公布号 KR20010061341(A) 申请公布日期 2001.07.07
申请号 KR19990063834 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, GI UNG;LEE, JU IL;PARK, JAE YEONG
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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