发明名称 |
METHOD FOR MANUFACTURING IMAGE SENSOR |
摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve a refractive index and a sensitivity of an image sensor by using a micro lens. CONSTITUTION: A flattening layer(26) is formed on a substrate(21) formed with a photo diode(23). An oxide layer is formed on the flattening layer(26). The oxide layer with the same width of the photo diode(23) is formed by etching the oxide layer. A nitride layer is formed on the whole structure. A nitride layer spacer(29a) is formed at a sidewall of the etched oxide layer by etching the nitride layer. A micro lens is formed by forming the nitride layer spacer(29a). The micro lens is formed with the oxide layer and the nitride layer.
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申请公布号 |
KR20010061341(A) |
申请公布日期 |
2001.07.07 |
申请号 |
KR19990063834 |
申请日期 |
1999.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN, GI UNG;LEE, JU IL;PARK, JAE YEONG |
分类号 |
H01L27/146;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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