MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is to prevent bad opening of a cell region between highly integrated gate patterns. CONSTITUTION: A gate electrode and a mask oxide layer are formed on a semiconductor substrate(21) in this order. The mask oxide layer is selectively etched to form a mask oxide layer pattern(26a). The gate electrode is etched using the mask oxide layer pattern as an etch barrier to form a gate electrode pattern(24a,25a). The mask oxide layer pattern of a predetermined width is then wet-etched. A sidewall oxide layer is deposited on the entire surface of the resultant structure and etched to form a spacer(29) at a sidewall of the gate electrode pattern. Thereafter, polysilicon is deposited on the entire surface and selectively etched to form a plug pattern(30) burying a hole between the gate electrode patterns.