METHOD OF FORMING CONDUCTIVE LINES OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A conductive line forming method for semiconductor device is provided to enhance the features and reliability of a semiconductor device by forming a conductive lines using a dual damascene technique for avoiding dishing or erosion. CONSTITUTION: A semiconductor substrate(21) is provided with an oxide film line/space pattern. A tungsten film(23) is formed on the whole surface of the semiconductor substrate(21) to fill between the line/space pattern. The tungsten film(23) is flattened through Chemical Mechanical Polishing (CMP) using slurry. The slurry has a ratio to deionized water of 100 to 500 : 1, or to a hydrogen peroxide of 50 to 100 : 1, and pH of 2 to 4. KOH or NH4OH is added to the slurry to prevent agglomeration of polishing particles.