| 摘要 |
PURPOSE: A method for manufacturing a power interconnection of a semiconductor device is provided to eliminate noise and to improve its characteristic and reliability, by forming adding a mask process to form a coupling capacitor. CONSTITUTION: An active region is defined in a semiconductor substrate(1). A well(2) and a well pickup(3) are formed by using an ion implantation process. The first gate oxide layer(4) and polysilicon(5) are stacked on the semiconductor substrate. The first photoresist layer pattern exposing a region for a coupling capacitor is formed on the semiconductor substrate. The upper portion of the exposed polysilicon is pre-purged with WF6 gas, and is deglazed to form the second gate oxide layer. The first photoresist layer is removed, and tungsten silicide is formed on the entire surface. The tungsten silicide, the second gate oxide layer, the polysilicon and the first gate oxide layer are patterned by a photolithography process using a word line mask. The tungsten silicide and the second gate oxide layer are etched to expose a portion of the polysilicon. Vss is connected to the polysilicon and Vcc is connected to the tungsten silicide and the well pickup in a subsequent process.
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