| 摘要 |
PURPOSE: A manufacturing method of ferroelectric memory device is provided to adjust the polarization direction of ferroelectric substances without influencing another cell transistor by using a dummy transistor. CONSTITUTION: A MOS transistor(MOS Tr) includes a gate electrode(43) on a semiconductor substrate(41) where a pair of impurity diffusion layers(44a,44b) and a gate insulation layer(42) are formed. An MFS transistor(MFS Tr) includes a gate electrode on the semiconductor substrate(41) having a pair of impurity diffusion layers(48a,48b) and a gate insulation layer(45), and a ferroelectric material(46) between the gate electrode(47) and the gate insulation film(45). The impurity diffusion layer(44a) is electrically connected to the gate electrode(47) through a local wiring(49). The impurity diffusion layer(44b) is connected to a bit line(BL) with the impurity diffusion layer(48a). The gate electrode(4) is connected to a word line(WL), and the impurity diffusion layer(48b) is connected to a reed line(RL).
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