METHOD FOR MAKING GATE OXIDE FILM

摘要

PURPOSE: A method of making a gate oxide film is provided to improve a leakage current property of the gate oxide film and to prevent increasing of thickness of the oxide film by suppressing reaction between a substrate and the gate oxide film. CONSTITUTION: A natural or thermal oxide film is removed from a silicon substrate(1) having a device isolation film(2) of a trench style using HF or BOE. An Al2O3 thin film(3) is deposited on the silicon substrate(1) so as to have a thickness of about 60 to 100 angstrom. The Al2O3 thin film(3) is annealed through a rapid thermal oxidation process so that carbon in the thin film is removed. The Al2O3 thin film(3) is processed according a following condition. The pressure in a chamber is maintained at several tens to several hundreds Torr, and a temperature of a substrate heater is about 300 to 400 deg.C. An RF power of about 50 to 400W is applied, with the heater becoming a ground and a shower head becoming an electrode. An O3 processing time is 1 to 20 minutes and an O3 concentration is about 10,000 to 200,000.