METHOD OF FORMING PLUG FOR CAPACITOR CONTACT IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a plug for capacitor contact is to secure uniformity of a thickness of a TiSiN layer when forming it in a plug shape. CONSTITUTION: An interlayer dielectric(21) and a scattered reflection prevention layer(22) are sequentially formed on a lower layer(20), and they are selectively etched to form a capacitor contact hole. Doped polysilicon is deposited on the entire structure to bury the contact hole, followed by performing a CMP(chemical mechanical polishing) process or an etchback process thereon, to form a recessed polysilicon plug(23) in the contact hole. A TiSiN layer(24) is then formed on the entire structure and a part thereof on the scattered reflection prevention layer is selectively etched back. Thereafter, The remaining TiSiN layer is polished off with the CMP process using the scattered reflection prevention layer as a polish stop layer.