SLURRY FOR CHEMICAL MECHANICAL POLISHING

摘要

PURPOSE: To inhibit the erosion which is generated at CMP(chemical mechanical polishing) of a copper metal film when forming a embedded wiring of a copper metal on a tantalic metal barrier metal film. CONSTITUTION: A polishing slurry containing at least an alkanol amine of formula (1): NR1m(R2OH)n (wherein R1 is a hydrogen atom or a 1-5C alkyl group; R2 is a 1-5C alkylene group; m is an integer of 0-2; n is a natural number of 1-3; and m+n is 3), is used.