| 摘要 |
PURPOSE: A gate electrode forming method of semiconductor device is provided to enhance the features and reliability of a semiconductor device by decreasing feature degradation of the device through reducing the overlapped area of a gate oxide film and a low concentration impurity area. CONSTITUTION: A gate electrode mask is used to patterning a layer structure of a gate insulation film and a doped polysilicon on a silicon substrate(2). Nitride film spaces are formed on sidewalls of the layer structure. A flattened tungsten silicide is formed on the whole surface of the layer structure. A capping poly and a mask oxide film(21) are layered on the tungsten silicide. The mask oxide film(21), the capping poly and the tungsten silicide are used as a gate electrode mask to pattern the layer structure to from a gate electrode. The gate electrode is used as a mask in injecting a low concentration impurity area into the silicon substrate(2) to enlarge the channel length under the gate electrode. Oxide film spacers(22) are formed on sidewalls of the gate electrode.
|
