| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent an escape of a storage electrode from an edge of a wafer in a core oxide layer removal process for forming a storage electrode. CONSTITUTION: An interlayer dielectric(15) having a storage electrode contact plug(17) is formed on a wafer(11). A core oxide layer(19) and the first sacrificial insulating layer(21) are formed on an upper portion of the whole structure. The first photoresist pattern is formed on the first sacrificial insulating layer(21). The first sacrificial insulating layer(21) is etched by using the first photoresist pattern as an etching mask. The first photoresist pattern is removed. The second sacrificial insulating layer and an etching barrier are formed thereon. The etching barrier, the second sacrificial insulating layer, the first sacrificial insulating layer(21), and the core oxide layer(19) are etched. A conductive layer is formed on the upper portion of the whole structure. The second photoresist pattern is formed on the upper portion of the whole structure. A storage electrode(33) is formed by removing the second photoresist pattern, the conductive layer, the etching barrier, the second sacrificial insulating layer, and the first sacrificial insulating layer(21). The storage electrode(33) formed on a die is exposed by removing the second photoresist pattern and the core oxide layer(19). The storage electrode(33) formed on the die is supported by the core oxide layer(19) and the first sacrificial insulating layer(21).
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