| 摘要 |
PURPOSE: A solid state imaging device, a method of manufacturing the same and a solid state imaging system are provided to use a MOS image sensor of a threshold voltage modulation system employed in a camera, a scanner, or the like. CONSTITUTION: The solid state imaging device comprises a photo diode formed in a p-type second semiconductor layer(15a) in an n-type first semiconductor layer, and a field effect transistor formed in a p-type fourth semiconductor layer(15b) in an n-type third semiconductor layer adjacent to the photo diode. A carrier pocket(25) is provided in the fourth semiconductor layer(15b), and a portion of the first semiconductor layer under the second semiconductor layer(15a) is thicker than a portion of the third semiconductor layer under the fourth semiconductor layer(15b) in a depth direction.
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