发明名称 PATTERN FOR TESTING RELIABILITY OF METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A pattern for testing reliability of a metal interconnection of a semiconductor device is provided to decrease the number of test samples and to reduce test time by testing reliability of a metal interconnection or via contact by a simplified test structure, and to select a line width and a via contact of the metal interconnection of superior reliability by testing relative superior reliability within a shortest interval of time regarding at least two interconnection structures. CONSTITUTION: Metal interconnections(10) having different sizes are connected in parallel. A test pattern is so formed that a test is continuously performed even if one of the metal interconnections having different sizes is disconnected.
申请公布号 KR20010061492(A) 申请公布日期 2001.07.07
申请号 KR19990063988 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HONG, SANG GI;LEE, GYEONG BOK
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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