发明名称 |
PATTERN FOR TESTING RELIABILITY OF METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A pattern for testing reliability of a metal interconnection of a semiconductor device is provided to decrease the number of test samples and to reduce test time by testing reliability of a metal interconnection or via contact by a simplified test structure, and to select a line width and a via contact of the metal interconnection of superior reliability by testing relative superior reliability within a shortest interval of time regarding at least two interconnection structures. CONSTITUTION: Metal interconnections(10) having different sizes are connected in parallel. A test pattern is so formed that a test is continuously performed even if one of the metal interconnections having different sizes is disconnected.
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申请公布号 |
KR20010061492(A) |
申请公布日期 |
2001.07.07 |
申请号 |
KR19990063988 |
申请日期 |
1999.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG, SANG GI;LEE, GYEONG BOK |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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