发明名称 BIT LINE SENSE AMP DRIVING CONTROL DEVICE
摘要 PURPOSE: A bit line sense amp driving control device is provided to decrease consumption electric power by supplying dropped internal source voltage as a sensing control source of a bit line in a self refresh mode. CONSTITUTION: A bit line sense amp driving control device includes a comparing part(20), the first current path forming part(30), the second current path forming part(40), and a sensing part(50). The comparing part(20) receives a feedbacked one side signal(rto) of a bit line sense amp activating control signal, and compares the one side signal(rto) with a reference voltage signal(Vref). The first current path forming part(30) is controlled by an output signal(/rto_ext) of the comparing part(20), and forms a current path for applying an external source voltage(Vext). The second current path forming part(40) is activated complimentarily with the first current forming part(30) by an inversion signal(/rto_en) of the output signal(/rto_ext), and forms a current path for applying a dropped internal source voltage(Vint) by the external source voltage(Vext) according to the one side signal(rto). The sensing part(50) senses a self refresh mode, and applies the sensed result to the comparing part(20). At this time, the comparing part(20) receiving the sensed result outputs the output signal(/rto_ext) for intercepting the first current path forming part(30), and outputs the inversion signal(/rto_en) of the output signal(/rto_ext) for activating the second current path forming part(40).
申请公布号 KR20010061380(A) 申请公布日期 2001.07.07
申请号 KR19990063874 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, JU HWAN
分类号 G11C11/401;G11C11/4091;(IPC1-7):G11C11/401;G11C11/409 主分类号 G11C11/401
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