METHOD FOR MANUFACTURING UNIT PIXEL OF IMAGE SENSOR IMPROVING DOPING PROFILE OF LOW VOLTAGE PHOTO DIODE

摘要

PURPOSE: A method for manufacturing a unit pixel of an image sensor improving a doping profile of a low voltage photo diode is provided to improve the reliability of an image sensor by forming a photo diode having a stable and uniform doping profile. CONSTITUTION: An isolation layer(3) for defining an active region is formed on the first semiconductor layer(2) of the first conductive type. A gate conductive layer is deposited on the isolation layer(2). The first photoresist pattern is formed thereon. A pattern is formed by etching the gate conductive layer. The second photoresist pattern is formed on a center portion of the gate. The first doping region(6) of the second conductive type is formed by implanting the second conductive type dopant into the semiconductor region. The first and the second photoresist patterns are removed. The third photoresist pattern is formed to open the active region. The second doping region of the first conductive type is formed by implanting the first conductive type dopant ions.