| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to restrict a dark current and increase the charge transfer efficiency by forming a shallow P0 diffusion region. CONSTITUTION: The first diffusion region(307) is formed by implanting the second conductive type dopant ions into the first conductive type semiconductor layer of a photo diode region. A CMOS device is formed on the semiconductor layer of a CMOS device region. An oxide layer doped with the first conductive type dopant is formed on the semiconductor layer of the photo diode region except for the CMOS device region. The second diffusion region(313) of the first conductive type is formed by diffusing the first conductive type within the oxide layer to a lower portion of a surface of the semiconductor layer.
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