| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to prevent the short circuit between devices by suppressing the excessive side growth on carrying out a selective epitaxial growth. CONSTITUTION: A gate oxide film(32), a conductive film(33) for a gate electrode, and a mask oxide film(34) are deposited on a substrate(30) with an isolation film(31) formed. After a side spacer(35) is formed on a side wall of the gate, the substrate is cleaned to remove a natural oxide film. An epitaxial silicon layer(36) is grown on the exposed substrate using a low pressure chemical vapor deposition in such a way that the layer has a height identical to or slightly higher than that of the gate. An interlayer dielectric(37) is deposited on the entire surface of the substrate to electrically insulate the epitaxial silicon layer from a following conductive layer, and is planarized through a chemical mechanical polishing. The interlayer dielectric is selectively etched to form a contact hole, and the contact hole is buried with a plug material to form a contact plug(38).
|
