DEVICE AND METHOD FOR MEASURING OXYGEN DENSITY OF SILICON WAFER BY CONDUCTIVITY MEASUREMENT USING GAS PERMEABLE MEMBRANE

摘要

PURPOSE: A measuring device for the oxygen density of a silicon wafer and a measuring method thereof are provided to easily and rapidly measure the oxygen density of the silicon wafer by a conductivity measurement using a gas permeable membrane. CONSTITUTION: An oxygen density measuring device for a silicon wafer contains a gas melting system(10) melting the silicon wafer; a gas permeable membrane(20) permeating gas from the gas melting system; and a conductivity sensor(30) sensing the conductivity of the gas melting system flowing deionized distilled water around the gas permeable membrane and the conductivity of gas soluble solution. The deionized distilled water melts gas from the gas permeable membrane. A graphite furnace is used for the gas melting system and oxygen in silicon is reacted with carbon of graphite to generate CO or CO2.