发明名称 METHOD OF MANUFACTURING MASK FOR EXPOSURE
摘要 PURPOSE: A manufacturing method of mask for exposure is provided to obtain a mask for exposure without damage of quarts substrate by forming an undercut under a chromium film. CONSTITUTION: A sacrifice insulation film(32) is formed on a quart substrate(31) at a certain thickness. A chromium film(33) is formed on the sacrifice insulation film(32). A photosensitive film is formed on the chromium film(33). The photosensitive film is patterned through exposure and etching to expose the chromium film(33). The chromium film(33) is etched using the photosensitive film pattern as a mask to expose the sacrifice insulation film(32). The chromium film(33) is removed through dry etching using the sacrifice insulation film(32) as an etching barrier. The photosensitive pattern is removed, and the sacrifice insulation film(32) is removed. The sacrifice insulation film(32) is isotropic etched to form an undercut under the chromium film(33).
申请公布号 KR20010061119(A) 申请公布日期 2001.07.07
申请号 KR19990063605 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SEOK GYUN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址