| 摘要 |
PURPOSE: A fuse box forming method for semiconductor device is provided to enhance the features, reliability and yield of a semiconductor device by preventing feature degradation through removing silicon residuals induced in a repair process. CONSTITUTION: A fuse(13) such as gate or bit line is formed on a semiconductor substrate(11) and the upper part of the fuse(13) is flattened to form the first insulation film(15). An anti-etching polysilicon thin film(17) is formed on the first insulation film(11), and the second insulation film(19) is formed on the anti-etching polysilicon thin film(17). The second insulation film(19), the anti-etching polysilicon thin film(17) and the first insulation film(15) are etched to form a repair fuse box. A remaining portion of the anti-etching polysilicon thin film(17) is removed through isotropic etching to prevent pollution from residuals.
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