| 摘要 |
PURPOSE: A storage electrode forming method for semiconductor device is provided to enhance the electric features and reliability of a semiconductor device by preventing bridge between storage electrodes and surface area reduction of the storage electrodes through preventing damage of the upper part of the storage electrodes in CMP. CONSTITUTION: A layer structure of an interlayer insulation film(15) and the first anti-etching film pattern(19) is formed. The first sacrifice insulation film(21), the second sacrifice insulation film(23) and the second anti-etching film are formed on the surface of the structure. The second anti-etching insulation film, the second sacrifice insulation film(23), the first sacrifice insulation film(21) and the first anti-etching pattern(19) are etched. The second anti-etching film pattern is removed. Then, a conductive film for storage electrode is formed on the whole surfaces. The conductive film for storage electrode is removed, and the third sacrifice insulation film(25) is formed for flattening. The third sacrifice insulation film(25), the conductive film for storage electrode and the second sacrifice insulation film pattern(23) are removed through Chemical Mechanical Polishing (CMP) to form storage electrodes. The third sacrifice insulation film(25), the second sacrifice insulation film pattern(23), the first sacrifice insulation film pattern(21) and the first anti-etching pattern(19) are removed.
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