METHOD OF FORMING TRANSISTOR FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A transistor forming method for semiconductor device is provided to stabilize a manufacturing process and enhance the features and reliability of the semiconductor device by forming source/drain extension areas under a polysilicon. CONSTITUTION: An element isolation film(13) is formed on a semiconductor substrate(11) to define an active area. Impurities are injected into the semiconductor substrate(11) to form a P-well and an N-well. A gate oxide film(15) and an amorphous silicon layer(17) are layered on the semiconductor substrate(11). N-type impurities are ion injected into the amorphous silicon layer(17) in an NMOS area. P-type impurities are ion injected into the amorphous silicon layer(17) in a PMOS area. A barrier metal layer(19), a tungsten layer(21) and a hard mask layer(23) are layered on the amorphous silicon layer(17). The gate oxide film(15) is etched leaving a certain thickness of the gate oxide film(15). An under cut is formed under the barrier metal layer(19). A polysilicon film is formed on the whole surface. The polysilicon film is etched to form spacers. An insulation film is formed on the whole surface and then etched to form insulation film spacers(27). N-type and P-type impurities are implanted to the semiconductor substrate(11) to form NMOS source/drain bonding areas(29) and PMOS source/drain bonding areas(31). The impurities are diffused from the polysilicon film spacers and the amorphous silicon layer(17) into the semiconductor substrate(11) to form an NMOS and a PMOS.