METHOD FOR MANUFACTURING THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY DEVICE

摘要

PURPOSE: A method for manufacturing a thin film transistor liquid crystal display device is to maintain a transmissivity and a color quality due to a passivation layer compound. CONSTITUTION: A gate electrode(12) is formed on a predetermined portion of a lower substrate(11). A gate insulating layer(13), an amorphous silicon layer(14) and a doped amorphous silicon layer(15) are formed on the lower substrate. A cleaning process is performed to an inside of a chamber. The seizing process to the inside of the chamber is performed at an amorphous silicon layer atmosphere. An active region is formed by patterning the doped amorphous silicon layer and the amorphous silicon layer to enclose the gate electrode. A portion of the metal layer deposited on the resultant structure is patterned to form source/drain electrodes(16a,16b). An exposed doped amorphous silicon layer is patterned to expose a portion of the amorphous silicon layer. The second seizing process is performed. A treatment to the exposed amorphous silicon layer is performed. A passivation layer(17) formed on the resultant structure is patterned to expose the drain electrode. A pixel electrode(18) is formed on the upper portion of the passivation layer.