| 摘要 |
PURPOSE: A content addressable memory cell reading circuit is provided to apply a boosting voltage higher than a source voltage on a gate node of the CAM(content addressable memory) cell to increase read margin of the CAM. CONSTITUTION: The content addressable memory cell reading circuit includes a power up reset circuit(11), a pulse generator(12), a clock generator(13), a boosting circuit(14) and a sensing circuit(15). The power up reset circuit initializes the device in order to enable the flash memory device. The pulse generator generates a predetermined pulse according to the output signal of the power up reset circuit. The clock generator generates a predetermined clock signal according to the pulse from the pulse generator. The boosting circuit generates the boosting voltage higher than the source voltage according to the clock signal from the clock generator and applies the boosting voltage on the gate node of the CAM. The sensing circuit senses the status of the CAM cell.
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