发明名称 METHOD FOR RECOVERING CELL OF FLASH MEMORY
摘要 PURPOSE: A method for recovering a cell of a flash memory is provided to automatically recover the cell by applying high voltage on a discharging member for a proper period of time during erasing charges on a floating gate. CONSTITUTION: The method for recovering the cell of the flash memory includes following steps. At the first step, float(S20) a drain and a source of the cell for erasing the charge on the floating gate after programming step(S10) while positive and negative voltages are applied on sub and control gate, respectively(S30). Then, the high voltage applied on the sub gate is decreased to a ground level(S50). At the third step, the ground voltage is applied on a source which was floated(S60). The cell to be recovered is recovered(S70) after the previous steps. The last step further includes a step of applying the source voltage on the drain of the cell to be recovered. Furthermore, The negative high voltage applied on the control gate is maintained to have a constant voltage level.
申请公布号 KR20010060527(A) 申请公布日期 2001.07.07
申请号 KR19990062924 申请日期 1999.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, BYEONG JIN;KIM, MIN GYU;LEE, JU YEOP;PARK, SEUNG HUI
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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