发明名称 SLURRY FOR CHEMICAL MECHANICAL POLISHING
摘要 PURPOSE: To provide a slurry for chemical mechanical polishing which inhibits the adhesion of polished products to polishing pads and yields fine polished products via a single polishing operation without interrupting the polishing operation, even when polishing a large amount of copper metals. CONSTITUTION: The slurry for chemical mechanical polishing for polishing base plates having copper or copper alloy films on their surface, contains an abrasive, an oxidizing agent and citric acid as an inhibitor which inhibits the adhesion of polishing products to a polishing pad.
申请公布号 KR20010062724(A) 申请公布日期 2001.07.07
申请号 KR20000082533 申请日期 2000.12.27
申请人 NEC CORPORATION;TOKYO MAGNETIC PRINTING CO., LTD. 发明人 AOYAI KENICHI;ITAKURA TETSUYUKI;SAKURAI SHIN;TSUCHIYA YASUAKI;WAKE TOMOKO
分类号 B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/308;H01L21/321;H01L21/768;(IPC1-7):C09K3/14 主分类号 B24B37/00
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