METHOD OF FORMING INTEGRATED CIRCUIT AND THE INTEGRATED CIRCUIT

摘要

PURPOSE: A method of forming an integrated circuit and the integrated circuit are provided to arrange a part of active circuit under a bond pad about the field of an integrated circuit. CONSTITUTION: The bond pad(27) is formed in the interior of the bond pad field(40) currently formed on the substrate(1). Active devices, such as a transistor(7), can be formed in the bottom of the interior of the bond pad field(40), and the bond pad(27). Substrates(1) may be arbitrary suitable substrates and a semiconductor device and an integrated circuit are formed on it. In one operation gestalt, a substrate(1) may be a silicon wafer. The bond pad(27) is formed from the metal membrane(17). Metal membranes(17) may be arbitrary suitable metal membranes used as an electric conduction layer inside an integrated circuit.