发明名称 |
SEMICONDUCTOR CERAMIC AND ELECTRONIC DEVICE USING THE SAME |
摘要 |
PURPOSE: To provide semiconductor ceramic having a high breakdown voltage in BaTiO3-based semiconductor ceramic having positive temperature characteristic resistance. CONSTITUTION: In a BaTiO3-based semiconductor ceramic having positive temperature characteristic of resistance, boundary temperature between a temperature region showing a positive temperature coefficient of resistance at a temperature of at least the Curie temperature and a temperature region showing a negative temperature coefficient of resistance at a temperature higher than this temperature is at least 180deg.C higher, e.g. 370deg.C higher than the Curie temperature.
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申请公布号 |
KR20010062273(A) |
申请公布日期 |
2001.07.07 |
申请号 |
KR20000074681 |
申请日期 |
2000.12.08 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
ANDO AKIRA;KAWAMOTO MITSUTOSHI;KODAMA MASAHIRO;NIIMI HIDEAKI |
分类号 |
H01C7/02;C04B35/468;(IPC1-7):H01C7/02 |
主分类号 |
H01C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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