| 摘要 |
PURPOSE: A method of increasing the superposition in a semiconductor device manufacturing process is provided to simplify a manufacturing process and enhance productivity by eliminating development, etching and cleansing in a process of forming an alignment key. CONSTITUTION: A photoresist is coated on a semiconductor substrate. An alignment key area of the photoresist is exposed in a scanner-type exposure apparatus to form a latent shape. The scanner-type exposure apparatus is aligned based upon the latent shape, and the alignment key area is exposed. The photoresist is developed to measure the superposition from the obtained alignment key pattern. An error is calculated based upon the obtained superposition. The error is corrected based upon the obtained calculation value. The photoresist is exposed to define a device pattern. The photoresist is developed to form a photoresist pattern.
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