| 摘要 |
PURPOSE: A data strobe buffer of a semiconductor memory device is provided to control a latch with a level signal without using a pulse signal, so obtaining enough time to control a data latch. CONSTITUTION: The buffer includes an inputting terminal(400), the first outputting terminal(410), and the second outputting terminal(420). The inputting terminal receives a data strobe signal(uds) of a high position, compares with a reference voltage and buffers when an activation signal generated from a write command is activated. The first outputting terminal receives an output of the inputting terminal and outputs the rising signal of a data strobe of a high position which is a level signal synchronized with the inputted data strobe signal of the high position. The second outputting terminal receives the output of the inputting terminal and outputs the falling signal of a data strobe of a high position which is a level signal synchronized with the inputted data strobe signal of the high position.
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