SURFACE TREATMENT METHOD AND PHOTOLITHOGRAPHY METHOD FOR THIN FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for processing the surface of a thin film is provided to decrease undercut generated in a photolithography process and to reduce a defect, by converting a hydrophilic layer into hydrophobicity. CONSTITUTION: A hydrophilic thin film is deposited on a substrate. A heat treatment process is performed regarding the thin film to convert the surface of the thin film into hydrophobicity. The temperature of the treatment process is from 140 deg.C to 200 deg.C. The treatment process is performed at an atmospheric pressure and in a nitrogen atmosphere.