| 摘要 |
PURPOSE: A method for fabricating a cylinder capacitor having an MPS(metastable polysilicon) and a semiconductor device having the cylinder capacitor are to ensure a capacitance and prevent capacitors of an adjacent cell from being connected according to an increase of an MPS surface area. CONSTITUTION: A transistor is formed on a semiconductor substrate(20) with an isolation layer(21) formed thereon. The transistor consists of a gate oxide layer(22), a gate electrode(23), and a junction region(24). The first interlayer dielectric(25) is formed on the entire structure. A bit line(26) is formed to be connected to the transistor through the first interlayer dielectric. The second interlayer dielectric(27) and an etching stop layer(28) are formed on the entire structure. A contact plug is formed to be connected to the transistor by selectively etching the etching stop layer and the second interlayer dielectric. A sacrificial insulating layer is formed on the entire structure. An opening is formed to expose the contact plug by selectively etching the sacrificial insulating layer, using a photoresist pattern as an etching mask. A highly doped polysilicon layer(31) and a low doped polysilicon layer(32) are deposited on the entire structure in this order. An MPS(33A) is formed on the low doped polysilicon layer by performing an MPS growth process. An MPS(33B) is formed on the highly doped polysilicon layer.
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