发明名称 APPARATUS FOR CONTROLLING END OF POINT DETECTION AND METHOD FOR CONTROLLING ETCHING END POINT USING THE SAME
摘要 PURPOSE: An apparatus for controlling an end of point detection is provided to maximize a fine signal conversion by using a composite optical analysis technology and a compound technology regarding various optical analysis signals. CONSTITUTION: A wafer is positioned in a plasma etching apparatus(100). A plurality of optical probes(200) detect the wavelength of plasma used in etching an insulating layer formed on the wafer. A signal converter(300) compounds a plurality of spectrums collected from the optical probes. A controller(500) determines an end of point detection by using the compound spectrums from the signal converter, and memorizes the shape of the end of point detection by using a neural network analysis(400).
申请公布号 KR20010061251(A) 申请公布日期 2001.07.07
申请号 KR19990063742 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, O SEONG;PARK, SIN SEUNG;SEO, DAE YEONG
分类号 H01L21/3213;(IPC1-7):H01L21/321 主分类号 H01L21/3213
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