发明名称 |
APPARATUS FOR CONTROLLING END OF POINT DETECTION AND METHOD FOR CONTROLLING ETCHING END POINT USING THE SAME |
摘要 |
PURPOSE: An apparatus for controlling an end of point detection is provided to maximize a fine signal conversion by using a composite optical analysis technology and a compound technology regarding various optical analysis signals. CONSTITUTION: A wafer is positioned in a plasma etching apparatus(100). A plurality of optical probes(200) detect the wavelength of plasma used in etching an insulating layer formed on the wafer. A signal converter(300) compounds a plurality of spectrums collected from the optical probes. A controller(500) determines an end of point detection by using the compound spectrums from the signal converter, and memorizes the shape of the end of point detection by using a neural network analysis(400).
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申请公布号 |
KR20010061251(A) |
申请公布日期 |
2001.07.07 |
申请号 |
KR19990063742 |
申请日期 |
1999.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KWON, O SEONG;PARK, SIN SEUNG;SEO, DAE YEONG |
分类号 |
H01L21/3213;(IPC1-7):H01L21/321 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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