| 摘要 |
PURPOSE: A method and an apparatus for manufacturing an IC is provided to prevent charge trapping phenomenon occurring on the interface between a dielectric material having a low (k) and another insulating material. CONSTITUTION: The method for manufacturing the IC includes a step of forming a first layer(704), forming a transition layer on a first layer by making a deposition gas, a dilution gas, and a conversion gas to flow on the surface of the first layer(706), stopping the flowing of the conversion gas in steps(708), and forming a second oxide layer(710). |
