| 摘要 |
PURPOSE: To provide a method of manufacturing a nitride-based III-V compound layer by which the quality of the compound layer can be improved and the manufacturing process of the layer can be simplified, and a method of manufacturing a substrate using the method. CONSTITUTION: A first grown layer 21 is grown on a substrate 10 for growth so that the growth rate of the layer 21 in the direction perpendicular to the growing surface may become >= 10 μm/h. Then a second grown layer 22 is grown so that the growth rate in the direction perpendicular to the growing surface may become > 10 μm/h. The surface of the first layer 21 grown at the faster growth rate becomes rough, but, since the second layer 22 is grown at the lower growth rate, the recessed parts on the surface of the layer 21 are filled up and the surface of the second layer 22 can be formed in a flat surface. In addition, since growth occurs in the lateral direction so as to fill the recessed parts on the surface of the first layer 21, the dislocation D taken over from the layer 21 is bent in the horizontal direction, and the density of the dislocation D propagated to the surface of the second layer 22 is largely reduced.
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