| 摘要 |
PURPOSE: A semiconductor device and processing method of the same is provided to use at least one of process support features at the via position of wiring structure to improve treatment or a treatment margin during successive treatment. CONSTITUTION: Process support features(210,70) make a layer that can flow on a via position(74) uniform thus assisting in forming a via opening. When a resist layer is formed on the process support features, the resist layer has uniform thickness on nearly all via positions in a device. When an insulation layer is formed on the via position, the insulation layer has uniform thickness on nearly all via positions in the device. When resist exposure or control during the etching of the via opening is improved, a treatment margin can be increased. |
