| 摘要 |
PURPOSE: To provide an image sensor in which a transparent electrode formed on an amorphous silicon layer can be protected against disconnection and a method of manufacturing the same. CONSTITUTION: An image sensor is equipped with TFTs arranged in an array on a transparent board, an array-like pixel part composed of a first interlayer film, a lower electrode (5 in Fig. 4), an a-Si layer (8 in Fig. 4), a transparent electrode (7 in Fig. 4), and a barrier metal film (8 in Fig. 4) which are laminated, a second interlayer film, and a lead-out wiring (18 in Fig. 4), where the a-Si layer is formed extending continuously from the pixel part to the lead-out wiring region so as to eliminate a stepped part formed at the edge of the a-Si layer, by which an upper electrode and a lead-out wiring such as the transparent electrode and the barrier metal formed on the a-Si later are protected against disconnection, and a light blocking film (3 in Fig. 4) is formed on the same layer with a gate electrode, by which light impinging on the a-Si layer except the pixel region is shut off.
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