| 摘要 |
PURPOSE: To irradiate a laser only in a desirable region by a method wherein a positional deviation between a stage and a substrate is restricted. CONSTITUTION: A semiconductor thin film modifying device comprises: an airtight container in which a substrate to which a semiconductor material is adhered can be accommodated in a predetermined substrate mounting part; a light source for irradiating lights for heating the semiconductor material up to a predetermined heating temperature by irradiating on the semiconductor material; a light transmission window which is provided in an airtight container, for transmitting lights from the light source to introduce into the airtight container, a holding means which is provided in a substrate mounting part, for fixing and holding the substrate to the substrate mounting part; and a pressure control means for controlling so as not to drop lower than a vapor pressure prescribed according to temperatures of the semiconductor material fused and heated by optical irradiation.
|
