| 摘要 |
PURPOSE: To restrain an insulating silicon oxide film from being formed by the oxidation of a Si base, when a ferroelectric layer is grown, to prevent distortion introduced into the ferroelectric layer when it is formed from being relaxed when a fine processing is carried out, to form a lower electrode which is kept free of fatigue deterioration caused by repetitive operations of write/ read, so as to improve ferroelectric capacitor in reliability. CONSTITUTION: A BTO ferroelectric thin film 36 is grown epitaxially on an Si substrate 31 through the intermediary of a lower electrode, and an SRO upper electrode 37 is formed on the ferroelectric thin film 36 for the formation of a ferroelectric capacitor, where the lower electrode is formed of a three- layered epitaxial film composed of a (Ti, Al) N film layer 33, an Ir layer 38, and an SOR layer 365.
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