SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To solve a problem in which a semiconductor memory device is increased in size and deteriorated in sense speed because a sense amplifier driver is arranged in a cross region which is produced by dividing a cell array through a hierarchical word line structure. CONSTITUTION: Power supply-side sense amplifier drivers 10a and ground-side sense amplifier drivers 10b which are arranged in a sense amplifier row 10 are connected to sense amplifiers 10c respectively to supply a sense amplifier drive voltage to them, so that a semiconductor memory device of this constitution can be enhanced in sense speed without increasing it in chip size.